4.結論

 首次將Langmuir-Schaefer方法用于DEAs電極的制備。將多壁碳納米管和聚（烷基噻吩）結合在一起，在空氣-水界面形成穩定的單分子膜，然后使用Langmuir-Schaefer技術將其轉移到PDMS膜上。單層電極由嵌入鉑單層中的互連多壁碳納米管網絡組成，其中鉑賦予機械性能，而多壁碳納米管確保系統的導電性。復合單分子膜可拉伸，導電率高達100%(～20 MΩ/0%應變時，～5 GΩ/在100%應變下）。使用LS方法制作圖案化超薄可拉伸電極，可以制作具有1.4μm厚PDMS介電膜的薄DEA。僅在100V下，該DEA達到4.0%線性應變。與DEAs通常需要的kV驅動電壓相比，這種低工作電壓為DEAs開辟了新的應用領域。我們在這里報告的LS電極是DEA在小于5V時產生全應變的關鍵構件：通過使用LS/LB技術制造彈性體和電極，將有可能制造多層DEA，其中所有層都是一個單分子厚度。這將是DEA技術的最終物理極限。

致謝

 我們衷心感謝Jun Shintake博士、Matthias Imboden博士、Alexandre Poulin博士和Samuel Schlater先生的有益評論和討論。這項工作是由歐盟的地平線2020研究和創新計劃在瑪麗SK·OOOWSKA居里補助金協議，第64 1822-MICACT通過瑞士國家教育、研究和創新秘書處，以及瑞士國家科學基金會授予第200020號165993。

附錄A.補充數據

 與本文相關的補充數據可在在線版本中找到，網址為//doi.org/10.1016/j.snb.2018.01.145.

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